<?xml version="1.0" encoding="UTF-8"?><feed xmlns="http://www.w3.org/2005/Atom" xmlns:dc="http://purl.org/dc/elements/1.1/">
<title>Ingeniería Eletrónica</title>
<link href="http://hdl.handle.net/20.500.12953/37" rel="alternate"/>
<subtitle/>
<id>http://hdl.handle.net/20.500.12953/37</id>
<updated>2026-04-23T06:40:29Z</updated>
<dc:date>2026-04-23T06:40:29Z</dc:date>
<entry>
<title>New technique for the implementation of nonlinear models for microwave transistors for broadband data communication</title>
<link href="http://hdl.handle.net/20.500.12953/38" rel="alternate"/>
<author>
<name>Rafael-Valdivia, Guillermo</name>
</author>
<id>http://hdl.handle.net/20.500.12953/38</id>
<updated>2021-06-11T19:39:34Z</updated>
<published>2015-07-27T00:00:00Z</published>
<summary type="text">New technique for the implementation of nonlinear models for microwave transistors for broadband data communication
Rafael-Valdivia, Guillermo
A new way to implement nonlinear models for microwave transistors is shown. It allows conventional drain current functions and conventional equivalent circuits to enhance their capabilities in order to predict the frequency dispersion.
</summary>
<dc:date>2015-07-27T00:00:00Z</dc:date>
</entry>
</feed>
