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Non-linear modeling for low and high power microwave transistors

dc.contributor.advisorSu, Zhiguo
dc.contributor.authorRafael Valdivia, Guillermo
dc.date.accessioned2019-04-02T21:20:52Z
dc.date.available2019-04-02T21:20:52Z
dc.date.issued2017-01-19
dc.identifier.citationG. Rafael-Valdivia and Z. Su, "Non-linear modeling for low and high power microwave transistors," 2016 46th European Microwave Conference (EuMC), London, 2016, pp. 847-850. doi: 10.1109/EuMC.2016.7824476 keywords: {equivalent circuits;gallium arsenide;III-V semiconductors;microwave transistors;nonlinear modeling;microwave transistors;GaAs devices;GaN devices;LDMOS devices;drain current functions;equivalent circuits;frequency dispersion;GaAs;GaN;Mathematical model;Microwave circuits;Microwave transistors;Pulse measurements;Radio frequency;Electromagnetic heating;Pulsed measurements;microwave transistors;trapping effects;device level modeling;GaAs;GaN;LDMOS}, URL: http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=7824476&isnumber=7824247es_ES
dc.identifier.urihttp://repositorio.ulasalle.edu.pe/handle/20.500.12953/65
dc.description.abstractNew generation of communications systems will demand the use of low power devices in mesh configuration. This work presents a new characterization procedure for those devices in order to predict their behaviour before the implementation saving time and cost.es_ES
dc.formatapplication/mswordes_ES
dc.language.isoengeng_US
dc.publisherIEEE Xplore Digital Libraryes_ES
dc.relationinfo:eu-repo/semantics/articlees_ES
dc.relation.urihttps://ieeexplore.ieee.org/document/7824476/authors#authorses_ES
dc.rightsinfo:eu-repo/semantics/restrictedAccesses_ES
dc.rights.urihttps://creativecommons.org/licenses/by-nc-nd/4.0/es_ES
dc.sourceRepositorio Institucional - ULASALLEes_ES
dc.subjectMathematical model , Microwave circuits , Microwave transistors , Pulse measurements , Radio frequency , Electromagnetic heatinges_ES
dc.titleNon-linear modeling for low and high power microwave transistorses_ES
dc.typeinfo:eu-repo/semantics/articlees_ES
dc.identifier.journalIEEE Xplore digital Libraryes_ES
dc.description.peer-reviewDoble- Ciegoes_ES
dc.identifier.doi10.1109/EuMC.2016.7824476es_ES
dc.subject.ocdeMicrowave circuits, Microwave transistorses_ES


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